S9011 transistor (npn) feature power dissipation p cm: 0.31 w (tamb=25 ) collector current i cm: 0.03 a collector-base voltage v (br)cbo : 30 v operating and storage junction temperature range t j , t stg : -55 to +150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v(br) cbo ic= 100a, i e =0 30 v collector-emitter breakdown voltage v(br) ceo i c = 0.1ma , i b =0 20 v emitter-base breakdown voltage v(br) ebo i e = 100a, i c =0 4 v collector cut-off current i cbo v cb =16v, i e =0 0.1 a collector cut-off current i cbo v cb =16v, i e =0 0.1 a emitter cut-off current i ebo v eb = 3.5v, i c =0 0.1 a dc current gain h fe(1) v ce =5v, i c =1ma 28 270 collector-emitter saturation voltage v ce(sat) i c = 10 ma, i b = 1ma 0.3 v base-emitter voltage v be(sat) i c = 10 ma, i b = 1ma 1 v transition frequency f t v ce =5v, i c =1ma, f=30mhz 150 mhz classification of h fe(1) rank d e f g h i j range 28-45 39-60 54-80 72-108 97-146 132-198 180-270 1 2 3 to-92 1. emitter 2. base 3. collector S9011 http:// www.wej.cn e-mail:wej@yongerjia.com wej electronic co. r o hs wej electronic co.,ltd
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